amplifier transistors npn silicon maximum ratings rating symbol bc546 bc547 bc548 unit collectoremitter voltage v ceo 65 45 30 vdc collectorbase voltage v cbo 80 50 30 vdc emitterbase voltage v ebo 6.0 vdc collector current e continuous i c 100 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watt mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage bc546 (i c = 1.0 ma, i b = 0) bc547 bc548 v (br)ceo 65 45 30 e e e e e e v collectorbase breakdown voltage bc546 (i c = 100 m adc) bc547 bc548 v (br)cbo 80 50 30 e e e e e e v emitterbase breakdown voltage bc546 (i e = 10 a, i c = 0) bc547 bc548 v (br)ebo 6.0 6.0 6.0 e e e e e e v collector cutoff current (v ce = 70 v, v be = 0) bc546 (v ce = 50 v, v be = 0) bc547 (v ce = 35 v, v be = 0) bc548 (v ce = 30 v, t a = 125 c) bc546/547/548 i ces e e e e 0.2 0.2 0.2 e 15 15 15 4.0 na m a on semiconductor ? semiconductor components industries, llc, 2001 may, 2001 rev. 3 1 publication order number: bc546/d bc546 bc546b bc547a bc547b BC547C bc548b bc548c case 2904, style 17 to92 (to226aa) 1 2 3 collector 1 2 base 3 emitter ( datasheet : )
bc546 bc546b bc547a bc547b BC547C bc548b bc548c http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain (i c = 10 m a, v ce = 5.0 v) bc547a bc546b/547b/548b bc548c (i c = 2.0 ma, v ce = 5.0 v) bc546 bc547 bc548 bc547a bc546b/547b/548b BC547C/bc548c (i c = 100 ma, v ce = 5.0 v) bc547a/548a bc546b/547b/548b bc548c h fe e e e 110 110 110 110 200 420 e e e 90 150 270 e e e 180 290 520 120 180 300 e e e 450 800 800 220 450 800 e e e e collectoremitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) (i c = 10 ma, i b = see note 1) v ce(sat) e e e 0.09 0.2 0.3 0.25 0.6 0.6 v baseemitter saturation voltage (i c = 10 ma, i b = 0.5 ma) v be(sat) e 0.7 e v baseemitter on voltage (i c = 2.0 ma, v ce = 5.0 v) (i c = 10 ma, v ce = 5.0 v) v be(on) 0.55 e e e 0.7 0.77 v smallsignal characteristics currentgain e bandwidth product (i c = 10 ma, v ce = 5.0 v, f = 100 mhz) bc546 bc547 bc548 f t 150 150 150 300 300 300 e e e mhz output capacitance (v cb = 10 v, i c = 0, f = 1.0 mhz) c obo e 1.7 4.5 pf input capacitance (v eb = 0.5 v, i c = 0, f = 1.0 mhz) c ibo e 10 e pf smallsignal current gain (i c = 2.0 ma, v ce = 5.0 v, f = 1.0 khz) bc546 bc547/548 bc547a bc546b/547b/548b BC547C/548c h fe 125 125 125 240 450 e e 220 330 600 500 900 260 500 900 e noise figure (i c = 0.2 ma, v ce = 5.0 v, r s = 2 k , bc546 f = 1.0 khz, d f = 200 hz) bc547 bc548 nf e e e 2.0 2.0 2.0 10 10 10 db note 1: i b is value for which i c = 11 ma at v ce = 1.0 v. figure 1.
bc546 bc546b bc547a bc547b BC547C bc548b bc548c http://onsemi.com 3 bc547/bc548 figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 3. collector saturation region i b , base current (ma) figure 4. baseemitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. currentgain bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc546 bc546b bc547a bc547b BC547C bc548b bc548c http://onsemi.com 4 bc546 figure 7. dc current gain i c , collector current (ma) figure 8. aono voltage i c , collector current (ma) 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 0.2 1.0 10 200 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. baseemitter temperature coefficient i c , collector current (ma) -1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) q 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = 5 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma -1.4 -1.8 -2.2 -2.6 -3.0 0.5 5.0 20 50 100 -55 c to 125 c q vb for v be figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. currentgain bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib
bc546 bc546b bc547a bc547b BC547C bc548b bc548c http://onsemi.com 5 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1
bc546 bc546b bc547a bc547b BC547C bc548b bc548c http://onsemi.com 6 notes
bc546 bc546b bc547a bc547b BC547C bc548b bc548c http://onsemi.com 7 notes
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